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利用分子束外延生长方法生长出InGaAs/GaAs应变量子阱材料。利用该材料制作出的应变量子阱列阵半导体激光器准连续(500μs,100Hz)输出功率达到27W(室温),峰值波长为939～941nm,并分析了影响列阵半导体激光器输出功率的因素。
InGaAs / GaAs strained quantum well materials were grown by molecular beam epitaxy. The quasi-continuous (500μs, 100Hz) output power of the strained quantum well array semiconductor laser produced by this material has reached 27W (room temperature) and the peak wavelength is 939 ~ 941nm. The factors influencing the output power of the semiconductor laser are analyzed.