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Thick diamond films with a thickness of up to 1.2 mm and a area of 20 cm~2 have been grown in a homemade 5 kW microwave plasma chemical vapor deposition (MPCVD) reactor using CH_4/H_2/H_2O gas mixtures. The growth rate, radial profiles of the film thickness, diamond morphology and quality were evaluated with a range of parameters such as the substrate temperature of 700℃ to 1100℃, the fed gas composition CH_4/H_2=3.0%, H_2O/H_2=0.0%～2.4%. They were characterized by scanning electron microscopy and Raman spectroscopy. Translucent diamond wafers have been produced without any sign of non-diamond carbon phases, Raman peak as narrow as 4.1 cm~(-1). An interesting type of diamond growth instability under certain deposition conditions was observed in a form of accelerated growth of selected diamond crystallites of a very big lateral size, about 1 mm, and of a better structure compared to the rest of the film.
Thick diamond films with a thickness of up to 1.2 mm and a area of 20 cm ~ 2 have been grown in a homemade 5 kW microwave plasma chemical vapor deposition (MPCVD) reactor using CH_4 / H_2 / H_2O gas mixtures. The growth rate, radial profiles of the film thickness, diamond morphology and quality were evaluated with a range of parameters such as the substrate temperature of 700 ° C. to 1100 ° C., the fed gas composition CH 4 / H 2 = 3.0% and H 2 O / H 2 = 0.0% -2.4%. They were characterized by scanning electron microscopy and Raman spectroscopy. Translucent diamond wafers have been produced without any sign of non-diamond carbon phases, Raman peak as narrow as 4.1 cm -1. An interesting type of diamond growth instability under certain deposition conditions was observed in a form of accelerated growth of selected diamond crystallites of a very big lateral size, about 1 mm, and of a better structure compared to the rest of the film.