长期以来,我国从半导体材料到器件再延伸至模块,始终没能迈进世界先进行列。从硅、锗第1代半导体到砷化镓、磷化铟第2代半导体,我国已经在制造和工艺技术上落后2个代差,核心技术和设备受制于人。而被行业寄予厚望的以碳化硅和氮化镓为代表的第3代半导体材料和应用,在产业化的道路上依然步履蹒跚,遇到许多“卡脖子”的问题。究其原因为何?“卡脖子”究竟“卡”在哪儿?我国第3代半导体材料及 For a long time, our country from the semiconductor material to the device and then extended to the module, has failed to move into the advanced ranks of the world. From silicon and germanium first generation semiconductors to gallium arsenide and indium phosphide second generation semiconductors, China has lagged behind in manufacturing and process technology for two generations, and its core technologies and equipment are controlled by others. The third generation of semiconductor materials and applications, which are highly regarded by the industry with silicon carbide and gallium nitride, are still faltering on the road to industrialization and encounter many problems. The reason why? “Card neck ” what “card ” where? China’s third generation of semiconductor materials and