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用磁控溅射法制备了GdFeCo/AlN/TbFeCo静磁耦合多层薄膜。振动样品磁强计和克尔磁滞回线测试装置的测试结果表明 :2 5℃不加外磁场时GdFeCo/AlN/TbFeCo静磁耦合多层薄膜读出层 (GdFeCo)的极向克尔角为零 ,读出层呈平面磁化 ;12 5℃不加外场时读出层的克尔角最大 (0 .5 4°) ,读出层的磁化方向为垂直磁化 ;随着温度增高 ,读出层由平面磁化转变为垂直磁化 ,在 75℃到 12 5℃温度范围内读出层磁化方向很快从平面磁化转变为垂直磁化。对磁化过程的机理研究表明 :饱和磁化强度和有效各向异性常量影响读出层磁化方向的转变过程 ,但主要受读出层饱和磁化强度的影响 ;在较高温度时读出层的磁化强度较小 ,退磁场能较小 ,在静磁耦合作用下 ,使GdFeCo读出层的磁化方向发生转变。制备的GdFeCo/AlN/TbFeCo静磁耦合多层薄膜适合作CAD MSR记录介质
GdFeCo / AlN / TbFeCo magnetically coupled multilayer films were prepared by magnetron sputtering. Vibrational sample magnetometer and Kerr hysteresis loop test device test results show that: 2 5 ℃ without external magnetic field GdFeCo / AlN / TbFeCo magnetostatically coupled multi-layer thin film readout layer (GdFeCo) Polarized Kerr angle Is zero, the readout layer is planar magnetization; the maximum Kerr angle (0.54 °) of the readout layer without external field at 125 ℃, the magnetization direction of the readout layer is perpendicular magnetization; as the temperature increases, readout Layer changes from planar magnetization to perpendicular magnetization, and the magnetization direction of the read layer rapidly changes from planar magnetization to perpendicular magnetization in the temperature range of 75 ° C to 125 ° C. The study on the mechanism of magnetization shows that the saturation magnetization and the effective anisotropy constants affect the transition of the magnetization direction of the readout layer, but it is mainly affected by the saturation magnetization of the readout layer. At higher temperatures, the magnetization of the readout layer Smaller, demagnetizing field can be smaller, in the magnetostatic coupling, the GdFeCo reading layer magnetization direction change. The prepared GdFeCo / AlN / TbFeCo magnetically coupled multilayer thin film is suitable as a CAD MSR recording medium