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采用坩埚下降法,成功地生长出了尺寸达25 mm×100 mm,Bi2O3初始掺杂摩尔分数为0.5%的CdWO4单晶。生长初期下部晶体呈青黄色,而生长后期晶体的颜色则显血红色。在808 nm与980 nm光激发下,观察到弱的1396～1550 nm(中心波长为1504 nm)与较强的1037～1274 nm(中心波长为1078 nm)波段的近红外宽带发光,并测定其荧光寿命分别为238μs和294μs。从生长初期的青黄色到生长后期的血红色晶体,1504 nm波段的荧光强度逐步增强,而1078 nm波段的荧光强度逐步减弱。根据实验结果初步探讨了红外宽带发光的机理和起因,1078 nm波段的荧光发射与Bi离子的掺杂有密切关系,而弱的1504 nm荧光发射可能与晶体中的杂质或掺杂后形成的缺陷等因素有关。
CdWO4 single crystal with the size of 25 mm × 100 mm and initial Bi2O3 mole fraction of 0.5% was successfully grown by the crucible descent method. The lower part of the initial growth of the crystal was yellowish, while the late growth of the crystal color was significantly reddish. Under the excitation of 808 nm and 980 nm, the near-infrared broadband luminescence of weak 1396-1550 nm (central wavelength 1504 nm) and strong 1037-1274 nm (central wavelength 1078 nm) was observed, Fluorescence lifetime is 238μs and 294μs, respectively. The fluorescence intensity of the 1504 nm band gradually increased from the pale yellow color of the initial growth to the red blood crystal of the late growth stage, while the fluorescence intensity of the 1078 nm band gradually weakened. Based on the experimental results, the mechanism and cause of broadband infrared light emission are discussed. The fluorescence emission at 1078 nm is closely related to the doping of Bi ions. However, the weak emission at 1504 nm may be related to the impurities or impurities in the crystal And other factors.