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本文描述半导体场引晶体管器件物理和理论所用的根本原则,它适用电场中有两种载流子的器件.讨论边界条件对器件电流电压特性的重要性.作为例子,计算两种边界条件下的转移直流电压特性:电势边界给出很高、流进内禀晶体管、飘移限制抛物型电流,电化学势边界仿真电子和空穴接触,给出很低、越过势垒注入、扩散限制电流,具有理想、每量级60mV、指数型亚阈值区倾斜.双MOS栅薄纯基硅场引晶体管为典型结构.
This paper describes the fundamental principles used in semiconductor field-effect transistor theory and physics, which is suitable for devices with two types of carriers in an electric field. The importance of the boundary conditions to the current-voltage characteristics of the device is discussed. As an example, Transfer DC voltage characteristics: the potential boundary is given high, flowing into the intrinsic transistor, drift limit the parabolic current, electrochemical potential boundary simulation of electron and hole contact, giving a very low, over the barrier injection, diffusion limiting current, with Ideal, 60mV per magnitude, exponential sub-threshold tilt. Dual MOS gate thin pure silicon base field-effect transistor is a typical structure.