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为进一步提高YVO_4材料的下转换发光性能,在改进后的溶胶-凝胶法制备的YVO_4∶Eu~(3+)中,通过掺入Bi~(3+)来拓宽其在紫外波段的光谱吸收并提高其发光强度,通过掺入P~(5+)达到以PO_4~(3-)部分取代VO_4~(3-)来改善YVO_4∶Eu~(3+)的光输出稳定性及温度猝灭特性的目的。研究表明,掺入的Bi~(3+)和P~(5+)可成功取代YVO_4晶格中的Y~(3+)和V~(5+)。当Bi~(3+)掺入量较少时,样品仍然为四方晶系,Bi~(3+)较好地取代了Y~(3+)的晶格位置,形成单相的晶体结构。而在掺入少量的P~(5+)之后,YVO_4与YPO_4之间形成了均匀的固溶体。在350 nm激发光源作用下,当Bi~(3+)和P5+掺杂摩尔分数分别为0.04和0.10时,发光强度达到最大,特别是YV0.90P0.10O4∶0.05Eu~(3+)在619 nm处的发光强度要比YVO_4∶0.05Eu~(3+)的发光强度增大1.9倍。
In order to further improve the luminescence properties of YVO_4, the YVO_4:Eu ~ (3+) prepared by the modified sol-gel method is broadened its absorption in the UV range by incorporating Bi ~ (3+) (3+) to improve the light output stability and temperature quenching of YVO_4: Eu ~ (3+) by adding P ~ (5+) to partially replace VO_4 ~ (3-) The purpose of the characteristic. The results show that Bi 3+ and P 5+ can successfully replace Y 3+ and V 5+ in the YVO 4 crystal lattice. When the amount of Bi 3+ doped is small, the sample is still tetragonal. Bi 3+ can replace the crystal lattice of Y 3+ to form a single phase crystal structure. After adding a small amount of P ~ (5+), a uniform solid solution was formed between YVO_4 and YPO_4. When the mole fraction of Bi 3+ and P 5+ is 0.04 and 0.10, respectively, the luminescence intensity reaches the maximum at 350 nm excitation light source, especially at YV 0.90 P0.10 O 4:0.05 Eu 3+ The luminescence intensity at nm is 1.9 times greater than the luminescence intensity at YVO 4: 0.05Eu ~ (3+).