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A red-light AlGaInP light emitting diode(LED)is fabricated by,using direct wafer bonding technology.Taking N-GaN wafer as the transparent substrate,the red-light LED is flip-chiped onto a structured silicon submount.Electronic luminance(EL)test reveals that the luminance flux is 130% higher than that of the conventional LED made from the same LED wafer.Current-voltage(Ⅰ-Ⅴ)measurement indicates that the bonding processes do not impact the electrical property of AlGaInP LED in the small voltage region (V＜1.5V).In the large voltage region (V＞1.5 V),the Ⅰ-Ⅴ characteristic exhibits space-charge-limited currents characteristic due to the p-GaAs/n-GaN bonding interface.