The advantages of In GaN/GaN light emitting diodes(LEDs) with p-GaN grown under high pressures are studied.It is shown that the high growth pressure could lead to better electronic properties of p-GaN layers due to the eliminated compensation effect.The contact resistivity of p-GaN layers are decreased due to the reduced donor-like defects on the p-GaN surface.The leakage current is also reduced,which may be induced by the better filling of V-defects with p-GaN layers grown under high pressures.The LED efficiency thus could be enhanced with high pressure grown p-GaN layers. The advantages of In GaN / GaN light emitting diodes (LEDs) with p-GaN grown under high pressures are studied. It shows the high growth pressure could lead to better electronic properties of p-GaN layers due to the elimination compensation effect. The contact resistivity of p-GaN layers is decreased due to the reduced donor-like defects on the p-GaN surface. The leakage current is also reduced, which may be induced by the better filling of V-defects with p-GaN layers grown under high pressures. LED efficiency could could be enhanced with high pressure grown p-GaN layers.