论文部分内容阅读
在Ｓｉ衬底上用ＭＢＥ方法进行ｎ型与ｐ型δ掺杂，将Ｓｉ的能带调制成锯齿型结构，产生Ｓｉ的带间跃迁．控制掺杂浓度与周期，来控制电子（空穴）跃迁的有效能隙，可望制成８－１２μｍ波长的Ｓｉ超晶格带间跃迁型红外探测器．
The n-type and p-type delta doping is performed on the Si substrate by the MBE method, and the energy band of Si is modulated into a zigzag structure to generate an interband transition of Si. By controlling the doping concentration and period to control the effective energy gap of the electron (hole) transition, it is expected to produce an Si superlattice band-to-band transition infrared detector with a wavelength of 8-12 μm.