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报道了一种新型有机材料AOSCN(3,9-双(10-(二氰基亚甲基)-9-亚甲蒽基)-2,4,8,10-四硫杂螺[5,5]十一烷),能与Cu形成具有电双稳特性的络合物,在6 V电压下,薄膜发生从高阻态到低阻态的转变,跃迁时间小于30 ns,驰豫时间小于1 us。若薄膜已发生高阻态到低阻态转变,高温热处理能使其恢复初始状态,这有望制成可擦写存储器。此外,在一定的工艺条件下,AOSCN与Cu和Al形成的金属-有机-金属(MOM)结,具有极性记忆效应。
A novel organic material AOSCN (3,9-bis (10- (dicyanomethylene) -9-methyleneanthracene) -2,4,8,10-tetrathiaospiro [5,5 ] Undecane) can form complexes with Cu with electric bistability. Under the voltage of 6 V, the transition from high resistance state to low resistance state occurs. The transition time is less than 30 ns and the relaxation time is less than 1 us. If the film has a high resistance state to low resistance state transition, high temperature heat treatment can make it restore the initial state, which is expected to make rewritable memory. In addition, the metal-organic-metal (MOM) junction formed by AOSCN with Cu and Al has a polar memory effect under certain process conditions.