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介绍了化学气相沉积(CVD)制备难熔金属钽涂层的原理及方法。采用冷壁式化学气相沉积法,在钼基体上沉积出难熔金属钽层。分析研究了CVD温度对沉积层的沉积速率、组织、结构和硬度等的影响。结果表明:在1000～1200℃温度范围,沉积速率随温度升高而增大;当温度超过1200℃时,沉积速率随温度的升高反而略有减小;沉积层组织呈柱状晶并随温度的升高逐渐增大;沉积层的硬度及密度随温度的升高而逐渐降低。化学气相沉积钽的最佳温度在1100℃左右。
The principle and method of preparing the refractory metal tantalum coating by chemical vapor deposition (CVD) are introduced. Cold-wall chemical vapor deposition is used to deposit a refractory metal tantalum layer on a molybdenum substrate. The effect of CVD temperature on the deposition rate, microstructure, structure and hardness of the deposited layer was analyzed. The results show that the deposition rate increases with the increase of temperature at the temperature range of 1000 ~ 1200 ℃. When the temperature exceeds 1200 ℃, the deposition rate decreases slightly with the increase of temperature. The deposited layer presents columnar crystal and changes with temperature Increased gradually; the hardness and density of sedimentary layer decreased with the increase of temperature. Chemical vapor deposition of tantalum at an optimal temperature of about 1100 ℃.