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This paper presents design and implementation of a dual-band LNA using a 0.35μm SiGe HBT process for 0.9 GHz GSM and 2.4 GHz WLAN applications.PCB layout parasitic effects have a vital effect on circuit performance and are accounted for using electro-magnetic(EM) simulation.Design considerations of noise decoupling, input/output impedance matching,and current reuse are described in detail.At 0.9/2.4 GHz,gain and noise figure are 13/16 dB and 4.2/3.9 dB,respectively.Both S_(11) and S_(22) are below -10 dB.Power dissipation is 40 mW at 3.5 V supply.
This paper presents design and implementation of a dual-band LNA using a 0.35 μm SiGe HBT process for 0.9 GHz GSM and 2.4 GHz WLAN applications. PCB layout parasitic effects have a vital effect on circuit performance and are accounted for using electro-magnetic (EM ) simulation.Design considerations of noise decoupling, input / output impedance matching, and current reuse are described in detail. At 0.9 / 2.4 GHz, gain and noise figure are 13/16 dB and 4.2 / 3.9 dB, respectively.Both S_ (11 ) and S_ (22) are below -10 dB. Power dissipation is 40 mW at 3.5 V supply.