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通过sol-gel法在Si(111)基片上分别制备了LaNiO3(LNO)底电极和LaNiO3/La0.3Sr0.7TiO3(LNO/LSTO)底电极.然后采用sol-gel方法,在两种衬底上分别制备了Pb(Zr0.5Ti0.5)O3(PZT)铁电薄膜.XRD分析表明,两种PZT薄膜均具有钙钛矿结构,且在LNO底电极上的PZT薄膜呈(100)择优取向,而在LNO/LSTO底电极上的PZT薄膜呈随机取向.铁电性能测试表明,相对LNO衬底上制备的PZT薄膜,在LNO/LSTO底电极上制备的PZT薄膜的剩余极化强度得到了有效的增强,同时矫顽场也增大.介电常数和漏电流的测试表明,LNO/LSTO底电极上制备的PZT薄膜具有大的介电常数和漏电流.
LaNiO3 (LNO) bottom electrode and LaNiO3 / La0.3Sr0.7TiO3 (LNO / LSTO) bottom electrode were prepared by sol-gel method on the Si (111) PbZn0.5TiO3 (PZT) ferroelectric thin films were prepared respectively.The XRD results show that the two PZT thin films have a perovskite structure, and the PZT thin films on the LNO bottom electrode have a preferred orientation of (100) While the PZT thin films on the LNO / LSTO bottom electrode are randomly oriented.The ferroelectric properties show that the residual polarization of the PZT thin films prepared on the LNO / LSTO bottom electrode is effective with respect to the PZT thin films prepared on the LNO substrate , And the coercive field also increases.The test of dielectric constant and leakage current show that the PZT thin film prepared on the LNO / LSTO bottom electrode has large dielectric constant and leakage current.