考虑到结温分布不均匀的情况 ,对用 ΔVbe法测量双极型晶体管的结温进行了研究 .当结温分布均匀时 ,测得的结温与测试电流无关 ;当结温分布不均匀时 ,小测试电流测得的结温高 ,大测试电流测得的结温低 ,测得结温随测试电流的变化范围随结温分布不均匀度的增加而增大 .这一现象可用来判别双极晶体管结温分布的不均匀性 . Considering the uneven distribution of junction temperature, the junction temperature of the bipolar transistor is measured by ΔVbe method. When the junction temperature distribution is uniform, the measured junction temperature is independent of the test current. When the junction temperature distribution is not uniform , A small test current measured junction temperature is high, a large test current measured junction temperature is low, measured junction temperature with the test current range with the junction temperature distribution increases non-uniformity increases.This phenomenon can be used to determine Bipolar transistor junction temperature distribution inhomogeneity.