论文部分内容阅读
用介电损耗法测量溴化银乳剂颗粒面[111]面上以其填隙银离子作为载流子时,低频峰值给出的离子电导率说明,溴化银T颗粒的填隙银离子浓度比八面体颗粒小得多。这可能是孪晶面提供填隙银离子稳定空穴,并有双电子层,负性在主平面上,正性在孪晶面上形成银离子,从表面位置移动到孪晶面的结果。这个模型说明了孪晶面上存在电子陷阱,并证实T颗粒电子陷阱更深。因此其内部敏度要比八面体颗粒更高。
The ionic conductivity given by the low-frequency peak shows that the interstitial silver ion concentration of the silver bromide T particles is higher than that of the silver bromide particles on the [111] face of the silver bromide emulsion particle measured by the dielectric loss method Much smaller than octahedral particles. This may be that the twin planes provide interstitial silver ion stable holes and have double electron layers that are negative in the main plane and positively form silver ions on the twin planes and move from the surface to the twin planes. This model illustrates the presence of electron traps on the twin planes and confirms that the T-particle electron traps are deeper. Therefore, its internal sensitivity than octahedral particles higher.