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本文首先提出了利用电流读出型的隧道二极管作为高速存储单元,它利用两个辅助二极管的非线性负载特性进行读出及写入。采用这种方案设计存储器时,必须适当地确定关于存储单元的构成元件及驱动波形的各参数值。为此,根据二极管限幅器,用折线近似表示隧道二极管及读写用的二极管的非线性伏安特性,然后用模拟计算机求解满足上述存储单元的微分方程式,并求出上述各个量之间的定量关系。
This paper first proposes to use a current-sensing tunnel diode as a high-speed memory cell, which uses the non-linear load characteristics of the two auxiliary diodes to read and write. When designing a memory using this scheme, it is necessary to appropriately determine each parameter value regarding the constituent elements of the memory cell and the drive waveform. Therefore, based on the diode limiter, the nonlinear voltammetry characteristics of the tunnel diode and the read / write diode are approximated by a broken line, and then the differential equation satisfying the memory cell is solved by an analog computer and the difference between Quantitative Relationship.