从基本的玻尔兹曼输运方程出发，推导了非均匀能带结构简并半导体中电子和空穴电流方程的一般形式，着重处理了方程中的载流子温度梯度项，给出了一种新的便于半导体器件数值分析的包含影响材料能带结构各主要因素的电流广义漂移扩散模型及相关系列公式，应用该模型对Ｓｉ／ＳｉＧｅ异质结双极晶体管的热电子效应进行了数值模拟和讨论。 Based on the basic Boltzmann transport equation, the general form of the electron and hole current equations in the degenerate semiconductor with inhomogeneous band structure is deduced. The temperature gradient term of the carrier is emphatically dealt with, and a A new generalized current drift diffusion model and its related series formulas that include the main factors that affect the energy band structure of the material are proposed. The model is used to simulate the thermoelectronic effect of the Si / SiGe heterojunction bipolar transistor And discussion.