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利用超高真空化学气相淀积(UHV/CVD)系统,在不同的温度、环境氛围及脱O过程参与等条件下对全息法制备的二维周期图形Si衬底进行退火,通过原子力显微镜(AFM)进行表征与分析,研究真空高温脱O过程对图形衬底表面形态变化的影响。结果表明,真空环境使衬底表面的Si原子可以自由运动,脱O过程增强了Si原子在表面的迁移,温度会影响Si原子的扩散速率,3个因素的共同作用导致图形深度变浅,侧壁坡度变缓。此外,在周期图形台面的边缘,观察到环形有序分布的纳米Si岛。
The two-dimensional periodic patterned Si substrate prepared by holographic method was annealed under different temperature, ambient atmosphere and de-O process using ultra-high vacuum chemical vapor deposition (UHV / CVD) system. The atomic force microscopy ) Characterization and analysis, to study the effect of vacuum high temperature de-O process on the surface morphology of the substrate. The results show that the Si atoms on the substrate surface can move freely under the vacuum environment. The de-O process enhances the migration of Si atoms on the surface. The temperature affects the diffusion rate of Si atoms. The interaction of three factors leads to the shallow depth of the pattern. Wall slope becomes slow. In addition, on the edge of the periodic pattern mesas, a ring-shaped ordered distribution of nano-Si islands is observed.