采用均匀沉淀法合成了ＺｎＳ半导体气敏材料；用Ｘ射线衍射和透射电镜确定了合成材料的物相和微观结构；用静态配气法测试了合成材料在低加热功率下对Ｈ２Ｓ气体的灵敏特性实验结果表明：硫代乙酰胺直接水解法制备的ＺｎＳ在低温对Ｈ２Ｓ具有好的灵敏度和选择性。 ZnS semiconductor gas-sensing materials were synthesized by homogeneous precipitation method. The phase and microstructure of the composites were confirmed by X-ray diffraction and transmission electron microscopy. The sensitivity of the synthesized materials to H2S gas at low heating power was tested by static gas distribution method The experimental results show that: ZnS prepared by the direct hydrolysis of thioacetamide has good sensitivity and selectivity to H2S at low temperature.