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对扩散p-n结的光电流在短波长区域的响应进行了解析研究。本文假设扩散p型区的杂质分布为高斯分布,并与前人的指数杂质分布结果作了比较。当用简化的指数杂质分布代替实际的高斯分布,即用一个常值的内建场代替与离表面距离有关的内建场时,对于表面复合相对于体复合为主要因素的p-n结,将引入一个正的光电流误差,反之将引入一个负的光电流误差,而对于表面和体复合两种因素可以比较的p-n结,则引入的误差甚小。
The response of the photocurrent at the diffused p-n junction in the short wavelength region is analyzed. This paper assumes that the impurity distribution in the diffused p-type region is a Gaussian distribution and is compared with the exponential distribution results of previous generations. When a simplified exponential distribution of impurities is used instead of the actual Gaussian distribution, that is, a constant built-in field is used instead of a built-in field related to distance from the surface, a pn junction for surface recombination relative to bulk recombination will be introduced A positive photocurrent error, on the other hand, introduces a negative photocurrent error, whereas for a pn junction that can be compared for both surface and bulk recombination, the error introduced is very small.