采用电子背散射衍射技术(EBSD),测量了微电子器件中A l互连线的晶粒结构、晶体学取向和晶界特征。A l互连线制备及退火工艺影响着互连线的显微结构和电徙动中值寿命(MTF)。结果表明,退火后晶粒明显长大,晶粒呈近竹节结构,形成很强的{111}织构,并使小角度晶界增加,从而提高了A l互连线的电徙动可靠性。 The electron backscatter diffraction (EBSD) technique was used to measure the grain structure, crystallographic orientation and grain boundary of the Al interconnects in microelectronic devices. A l The interconnection preparation and annealing process affects the microstructure and electromigration median lifetime (MTF) of the interconnect. The results show that the grains grow obviously after annealing, the grains are nearly bamboo structure, forming a strong {111} texture and increasing the small angle grain boundaries, thus increasing the reliability of the migration of A l interconnects Sex.