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采用低温缓冲层技术,在硅(Si)衬底上生长了质量优良的锗(Ge)薄膜。Ge层受到由于Si和Ge热膨胀系数不同引入张应变,大小约为0.16%。以外延的Ge层作为吸收区,前后以Ge/空气作为分布布拉格反射镜(DBR),在Si基上制备波导共振腔增强型(RCE)光电探测器。测试表明,器件在-1V偏压下,暗电流密度为14.9mA/cm2;在零偏压下,器件的响应光谱在1.3~1.6μm波长范围内观察到4个共振增强峰,分别位于1.35、1.45、1.50和1.55μm,光响应波长范围扩展到1.6μm以上,采用传输矩阵法模拟的响应光谱与实验测得结果近似吻合;在1.55μm入射光的照射下,测得光响应度为21.4mA/W。
Using low temperature buffer layer technology, germanium (Ge) thin film with good quality is grown on silicon (Si) substrate. The Ge layer is subjected to a tensile strain of about 0.16% due to the difference in thermal expansion coefficients of Si and Ge. The epitaxial Ge layer was taken as the absorption area, and Ge / air was used as the distributed Bragg reflector (DBR) before and after the waveguide RCE photodetector was fabricated on Si substrate. The results show that the device has a dark current density of 14.9mA / cm2 at a bias voltage of -1V. Under zero bias voltage, the response spectrum of the device shows four resonance enhancement peaks in the wavelength range of 1.3-1.6μm at 1.35, 1.45, 1.50 and 1.55μm, the light response wavelength range extended to 1.6μm above, the response matrix simulated by the transfer matrix approximation with the experimental results; at 1.55μm incident light irradiation, the measured optical responsivity of 21.4mA / W.