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利用磁控溅射,在玻璃基底上沉积了ITO∶Ta薄膜。研究了在不同衬底温度下ITO和ITO∶Ta薄膜的光电性能。高价金属元素Ta掺杂促进薄膜晶化的同时,导致了(400)晶面择优取向的形成。低温沉积的ITO∶Ta薄膜比ITO薄膜展示了较好的光电性能,Ta掺杂使得室温沉积ITO薄膜的效益指数分别由0.003×10-3Ω-1上升到了0.880×10-3Ω-1。透射谱表明,参数的变化引起明显的Burstin-Moss效应,通过直接跃迁的模型研究了光学禁带的变化。
Using magnetron sputtering, an ITO: Ta thin film was deposited on a glass substrate. The photoelectric properties of ITO and ITO: Ta films at different substrate temperatures were investigated. The high-valent Ta element doping promotes the crystallization of the thin films and at the same time leads to the formation of the preferred orientation of the (400) plane. The low temperature deposited ITO: Ta films exhibited better photoelectric properties than the ITO films. The doping efficiency of Ta films increased from 0.003 × 10-3Ω-1 to 0.880 × 10-3Ω-1, respectively. The transmission spectra showed that the change of parameters caused obvious Burstin-Moss effect. The optical band gap changes were studied by direct transition model.