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采用射频磁控溅射法制备了以低功率溅射得到的PbxSr1-xTiO3(PST)薄膜为缓冲层(同质缓冲层)的PST双层薄膜。通过X-射线衍射、扫描电镜、阻抗分析仪和铁电分析仪对薄膜相结构、表面形貌、介电损耗和铁电性能进行了测试分析。结果表明,以低功率溅射得到的PST薄膜作为同质缓冲层的双层薄膜可减少薄膜的缺陷,从而有效降低介电损耗。
The birefringent films of PbxSr1-xTiO3 (PST) thin films with buffer layer (homogeneous buffer layer) were fabricated by RF magnetron sputtering. The phase structure, surface morphology, dielectric loss and ferroelectric properties of the films were tested by X-ray diffraction, scanning electron microscopy, impedance analyzer and ferroelectric analyzer. The results show that the bilayer thin film with PST film sputtered at a low power as a homogeneous buffer layer can reduce the defects of the thin film and effectively reduce the dielectric loss.