【摘 要】
：
H2O2 has been widely applied in the fields of chemical synthesis,medical sterilization,pollutant re-moval,etc.,due to its strong oxidizing property and the avoidable secondary pollution.Despite of the en-hanced performance for H2O2 generation over g-C3N4
【机 构】
：
College of Chemistry and Materials Science,Sichuan Normal University,Chengdu 610068,China;College of
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H2O2 has been widely applied in the fields of chemical synthesis,medical sterilization,pollutant re-moval,etc.,due to its strong oxidizing property and the avoidable secondary pollution.Despite of the en-hanced performance for H2O2 generation over g-C3N4 semiconductors through promoting the separation of photo-generated charge carriers,the effect of migration orientation of charge carriers is still ambigu-ous.For this emotion,surface modification of g-C3N4 was employed to adjust the migration orientation of charge carriers,in order to investigate systematically its effect on the performance of H2O2 genera-tion.It was found that ultrathin g-C3N4 (UCN) modified by boron nitride (BN),as an effective hole-attract agent,demonstrated a significantly enhanced performance.Particularly,for the optimum UCN/BN-40％catalyst,4.0-fold higher yield of H2O2 was obtained in comparison with the pristine UCN.As comparison,UCN modified by carbon dust demonstrated a completely opposite tendency.The remarkably improved performance over UCN/BN was ascribed to the fact that more photo-generated electrons were remained inside of triazine structure of g-C3N4,leading to the formation of larger amount of 1,4-endoxide.It is anticipated that our work could provide new insights for the design of photocatalyst with significantly improved performance for H2O2 generation.
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