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本文在分析表面扩散各向异性、二聚体和二聚体列影响的基础上,建立了Si(100)-(2×1)表面上Si薄膜生长的K inetic Monte Carlo(KMC)模型,利用该模型对薄膜生长的初始阶段进行了研究。结果表明:吸附原子的扩散距离随温度的变化满足指数函数L=L0AeT/C。在一定的入射率下存在一最佳成岛温度,该温度随入射率的增大而升高。随入射率的减小,薄膜逐渐从离散生长向紧致生长转变,表面扩散的各向异性越显著。
Based on the analysis of the influence of surface diffusion anisotropy, dimer and dimer, a K inetic Monte Carlo (KMC) model of Si thin film growth on Si (100) - (2 × 1) surface is established. The model studied the initial phase of film growth. The results show that the diffusion distance of adsorbed atoms changes with the temperature to satisfy the exponential function L = L0AeT / C. At a certain incident rate, there exists an optimum island temperature, which increases with increasing incident rate. As the incident rate decreases, the film gradually changes from discrete growth to compact growth, and the anisotropy of surface diffusion becomes more significant.