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Zirconia coatings as hydrogen permeation barriers were formed on disk-type ZrH1.8 substrate specimens in phosphate solution system by microarc oxidation technique. Influence of positive voltage on hydrogen permeation barriers on the surface of zirconium hydride was investigated as the main factor. The thickness of total oxide layer increased from 42.5 to 55.0 μm the increase of positive voltage increasing from 325 up to 425 V. The permeation reduction factor (PRF) was observed under different voltages, which increased with the increasing positive voltages. The phase structure of oxide layer was monoclinic ZrO2 and tetragonal ZrO1.88 . No reduction reaction occured in the process of hydrogen escaping, and it indicates that hydrogen permeation through oxide layer is restricted.
Zirconia coatings as hydrogen permeation barriers were formed on disk-type ZrH1.8 substrate specimens in phosphate solution system by microarc oxidation technique. Influence of positive voltage on hydrogen permeation barriers on the surface of zirconium hydride was investigated as the main factor. The thickness of The increase in positive voltage increasing from 325 up to 425 V. The permeation reduction factor (PRF) was observed under different voltages, which increased with the increasing positive voltages. The phase structure of the oxide layer was No reduction reaction occured in the process of hydrogen escaping, and it indicates that hydrogen permeation through oxide layer is restricted.