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The Bi4Zr0.5Ti2.5O12 (BZT) thin films were fabricated on the LaNiO3 bottom electrode using sol-gel method. The structure and morphology of the films were character-ized using X-ray diffraction, AFM and SEM. The results show that the films have a perovskite phase and dense microstructure. The 2Pr and 2Vc of the Pt/BZT/LaNiO3 capacitor are 28.2 μC/cm2 and 14.7 V respectively at an applied voltage of 25 V. After the switching of 1×1010 cycles, the Pr value decreases to 87% of its pre-fatigue val-ues. The dielectric constant (ε) and the dissipation factor (tanδ) of the BZT thin films are about 204 and 0.029 at 1 kHz, respectively. The films show good insulating behavior according to the test of leakage current. The clockwise C-V hysteresis curve observed shows that the Pt/BZT/LaNiO3 structure has a memory effect be-cause of the BZT film’s ferroelectric polarization.
The results show that the Bi4Zr0.5Ti2.5O12 (BZT) thin films were fabricated on the LaNiO3 bottom electrode using sol-gel method. The structure and morphology of the films were character-ized using X-ray diffraction, AFM and SEM. The 2Pr and 2Vc of the Pt / BZT / LaNiO3 capacitors are 28.2 μC / cm2 and 14.7 V respectively at an applied voltage of 25 V. After the switching of 1 × 1010 cycles, the Pr value The dielectric constant (ε) and the dissipation factor (tan δ) of the BZT thin films are about 204 and 0.029 at 1 kHz, respectively. The films show good insulating behavior according to the test of leakage current. The clockwise CV hysteresis curve observed that the Pt / BZT / LaNiO3 structure has a memory effect be-cause of the BZT film’s ferroelectric polarization.