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报道了优化p面电极的高功率高光束质量980nm垂直腔底面发射激光器(VCSEL).采用数学模型对VCSEL的电流密度进行了模拟计算,发现电流密度分布由氧化孔直径和p面电极直径决定.确定氧化孔直径后,优化p面电极直径可以实现电流密度的均匀分布,抑制远场光斑中高阶边模的产生.将p面电极直径优化为580μm,制作的600μm的VCSEL远场发散角从30°减小到15°,优化器件的阈值电流和最高输出功率都略有增加.通过改进器件封装方式后,器件输出功率达到2.01W,激射波长为982.6nm.
The high power and high beam quality 980nm vertical cavity bottom emitting lasers (VCSELs) with optimized p-plane electrodes are reported.The current density of VCSELs is simulated by mathematical model and the current density distribution is determined by the diameter of the oxidation holes and the diameter of p-electrode. After determining the diameter of the oxidation pores, the optimization of the diameter of the p-plane electrode can achieve the uniform distribution of the current density and suppress the generation of the high-order side modes in the far-field spot. The diameter of the p-plane electrode is optimized to be 580 μm, ° to 15 °, the threshold current and the maximum output power of the optimized device both slightly increase.Through improving the device package, the device output power reaches 2.01W and the lasing wavelength is 982.6nm.