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在温度为500～950℃范围内研完了LEC(PBN)生长GaAs的退火效应。退火引起电学和光学性能的变化有(1)退化(2)恢复(3)稳定和(4)均匀性改善,这些现象与退火条件和样品的热处理历程有关。暂且把这些变化归因于体深能级密度的作用和应力的释放。
The annealing effect of GaAs grown on LEC (PBN) was studied in the temperature range of 500 ~ 950 ℃. Annealing causes changes in electrical and optical properties such as (1) degradation (2) recovery (3) stability and (4) uniformity improvement, which are related to annealing conditions and the heat treatment history of the sample. At the moment, these changes are attributed to the role of body-level energy density and the release of stress.