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本文提出了一种新颖的MEMS多掩膜工艺,实现了带有大台阶和大深宽比窄槽的衬底上的体硅精细加工。通过薄胶多次光刻在衬底上制作出氧化硅(SiO2)、氮化硅(Si3N4)、光刻胶(photo-resist,PR)等材料的多层掩膜图形,每层掩膜可以进行一次衬底刻蚀或腐蚀,刻蚀或腐蚀完毕后去除该层掩膜。该工艺解决了MEMS工艺中的深坑涂胶和光刻问题,结合深反应离子刻蚀(Deep Re-active Ion Etching,DR IE)、湿法腐蚀等工艺可以用于多级台阶、深坑底部精细结构、微结构释放等MEMS工艺。
In this paper, a novel MEMS multi-masking process is proposed, which realizes the bulk silicon processing on the substrate with large steps and narrow slot with large aspect ratio. A multi-layer mask pattern of a material such as silicon oxide (SiO 2), silicon nitride (Si 3 N 4), photo-resist (PR) Perform a substrate etch or etch, or remove the mask after etching or etching. The process solves the problem of deep pit coating and lithography in the MEMS process. The process combined with deep reactive ion etching (DR IE) and wet etching can be used for multi-level steps. The bottom of the pit Fine structure, microstructure release and other MEMS technology.