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本文报道了用反应离子刻蚀（RIE）与晶向湿法化学腐蚀（XWCE）相结合沿InP衬底（110）方向获得工作波长1．3μm的InGaAsP／InP双异质结激光器的腔面的方法．用CH4：H2：Ar2的混合物作干法刻蚀的反应气体，用H2SO4：HCl：H2O2作湿法腐蚀的腐蚀剂，我们获得了质量较好的激光器的光学腔面．用一个刻蚀腔面与一个解理面组成激光器的F－P腔，我们获得了它的宽接触阈值电流和微分量子效率与用传统的解理腔面的激光器的宽接触阈值电流与微分量子效率相当的激光器．
In this paper, we report the cavity surface of InGaAsP / InP double heterostructure laser with working wavelength of 1.3μm along the direction of InP substrate (110) by reactive ion etching (RIE) combined with crystal orientation wet chemical etching (XWCE) method. Using a mixture of CH4: H2: Ar2 as a reactive gas for dry etching and using H2SO4: HCl: H2O2 as an etchant for wet etching, we obtained an optical cavity surface of a better quality laser. Using an F-P cavity composed of a laser cavity with a cleavage plane and a cavity plane, we obtain its wide contact threshold current and differential quantum efficiency as well as the wide contact threshold current with a conventional cleaved cavity laser with differential quantum Equivalent laser.