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Submicrometer epilayers have been grown in Ga-AsCl_3-H_2 system using elemental sulfur as adopant.The mechanism of sulfur incorporation was discussed on the basis of surface adsorption.Ithas been shown that the electrical properties of single epilayers are typically n=1-2×10~(17)/cm~3,thick-ness 0.4 μm and breakdown voltage about 7—10V.The width of interface region in single andmultilayer structures is about 0.1μm.The epilayers obtained have been used to fabricate the microwave devices,such as Gunn diodes,varactors,and far infrared detectors.
Submicrometer epilayers have been grown in Ga-AsCl 3 -H 2 system using elemental sulfur as an adopant. The mechanism of sulfur incorporation was discussed on the basis of surface adsorption. These have shown that the electrical properties of single epilayers are typically n = 1-2 × 10-17 / cm3, thick-ness 0.4 μm and breakdown voltage about 7-10V. The width of interface region in single and multilayer structures is about 0.1 μm. The epilayers have been used to fabricate the microwave devices, such as Gunn diodes, varactors, and far infrared detectors.