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采用能量为1.5 MeV、辐照温度为100℃、辐照剂量为1.8×1018 e/cm2电子辐照直拉单晶硅;然后对电子辐照样品进行不同温度和时间的低温(200~600℃)热处理。通过辐照样品的Fourier变换红外光谱研究了热处理后样品中的空位–氧相关缺陷的转化情况。结果表明:未经热处理的电子辐照的硅样品中出现了空位–双氧复合体(VO2)缺陷的889 cm–1吸收峰,这是由于辐照温度较高所致。经低温热处理后,在氧含量较低的辐照样品中的VO和VO2缺陷会相互转化,而氧含量较高的样品中VO、VO2吸收峰强度几乎不变。VO2和空位–三氧复合体(VO3)缺陷在450℃热处理30 min后呈现出一定的稳定性。
The single crystal silicon was irradiated with 1.5 MeV energy, 100 ℃ irradiation and 1.8 × 1018 e / cm2 electron irradiation. The electron irradiation samples were subjected to low temperature (200 ~ 600 ℃) with different temperature and time Heat treatment. Fourier transform infrared spectroscopy of irradiated samples was used to investigate the conversion of vacancies and oxygen-related defects in the samples after heat treatment. The results show that there is a 889 cm-1 absorption peak at vacancy-dioxo complex (VO2) defect in the electron-irradiated silicon samples, which is due to the high irradiation temperature. After low temperature heat treatment, VO and VO2 defects in the irradiated samples with lower oxygen content transform into each other, while the intensity of VO and VO2 absorption peaks in samples with high oxygen content hardly change. VO2 and vacancy - trioxide complex (VO3) defects showed a certain stability after heat treatment at 450 ℃ for 30 min.