This paper reports that the Schottky barrier height modulation of NiSi/n-si is experimentally investigated byadopting a novel silicide-as-diffusion-source technique.which avoids the damage to the NiSi/Si interface induced fromthe conventional dopant segregation method.In addition,the impact of post-BF2 implantation after silicidation on thesurface morphology of Ni silicides iS also illustrated.The thermat stabihty of Ni silicides can be improved by sihcide-as-diffusion-source technique.Besides,the electron Schottky barrier height is successfully modulated bv 0.11 eV at aboron dose of 1015 cm-2 in comparison with the non.implanted samples.The change of barrier height is not attributedto the phase change of silicide films but due to the boron pile-up at the interface of NiSi and Si substrate which causesthe upward bending of conducting band.The results demonstrate the feasibility of novel silicide-as-diffusion-sourcetechnique for the fabrication of Schottky source/drain Si MOS devices.