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通过对ＩＧＢＴ、ＭＯＳＦＥＴ等为开关器件的新一代弧焊逆变器主电路的拓朴结构进行的数学分析和研究，建立了电路层次的数学模型，探讨了四种典型拓朴结构的特性，推导了它们的输出功率和开关器件的电流表达式，得出了一些有意义的结论。
Through the mathematic analysis and research on the topology structure of the new generation of arc-welding inverter main circuit which is the switching device such as IGBT and MOSFET, the mathematical model of circuit level is established and the characteristics of four typical topological structures are discussed. The output power of them and the current of the switching device are obtained, and some meaningful conclusions are drawn.