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在人体模型静电放电(electrostatic discharge,ESD)的注入作用下,部分高频小功率硅双极晶体管对人体模型静电放电最敏感的管脚端对不再是普遍认为的发射极E-基极B间的EB反偏结,而是集电极C与基极B间的CB反偏结。为此,采用微观失效分析与计算机模拟仿真分析相结合的方法,详细讨论了不同管脚对引发典型高频小功率硅双极晶体管ESD失效的效应机理,并针对典型器件内部不同位置的损伤点逐个进行分析。最终得出:高频小功率硅双极晶体管的明显失效往往是由于热二次击穿造成的基极有源区与发射极之间的熔融穿通引起的,而ESD潜在性失效发生的主要原因则是其基极或发射极金属电极附近绝缘介质的场致击穿,从而影响高频小功率硅双极晶体管使用的可靠性。
In the human body model electrostatic discharge (electrostatic discharge, ESD) injection, part of the high-frequency low-power silicon bipolar transistor electrostatic discharge on the human body model is most sensitive to the end of the pin is no longer generally considered E-base B Between the EB anti-bias junction, but the collector C and B between the base B reverse bias junction. Therefore, a combination of microscopic failure analysis and computer simulation is used to analyze the effect of different pins on the ESD failure of a typical high-frequency, low-power silicon bipolar transistor. In addition, the damage points at different locations inside a typical device Analyze one by one. Finally, it is concluded that the obvious failure of the high-frequency and low-power silicon bipolar transistor is often caused by the melt-through between the base active region and the emitter due to thermal secondary breakdown, and the main reason for the potential failure of ESD It is the base or emitter metal electrode near the dielectric breakdown field, thus affecting the reliability of high-frequency low-power silicon bipolar transistor.