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A~(1V)B~(V1)族固溶体广泛用于红外技术的前提条件是:当组分、温度及其他外部参数变化时,这类固溶体能在很大范围内平滑地改变其性能。关于PbSe—PbTe系统电学性能,已发表的报道很不充分。因此,对PbSe_(1-x)Te_x系统动力学现象进行研究,便具有一定的理论及实际意义。本文的目的,是研究P型PbSe_(0.8)Te_(0.2)外延层在温度范围为77—800K、浓度ρ_(77K)=8×10~(17)—1×10~(19)厘米~(-3)条件下的迁移现象。研究用试样,是按文献[3]所拟定的工
A ~ (1V) B ~ (V1) family of solid solutions are widely used in infrared technology with the proviso that such compositions can smoothly change their properties over a wide range of components as the composition, temperature and other external parameters change. Published reports have not been sufficient on the electrical properties of PbSe-PbTe systems. Therefore, studying the kinetics of PbSe_ (1-x) Te_x system has certain theoretical and practical significance. The purpose of this paper is to study the effect of the P-type PbSe_ (0.8) Te_ (0.2) epitaxial layer on the surface of the PZTs in the temperature range of 77-800K and the concentration of 77K = 8 × 10-17 × 10-19 cm- -3) conditions of the migration phenomenon. Research samples, according to the literature [3] developed by the workers