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利用国产MBE没备,选择合适的生长参数,获得优质的GaAs/Al_xGa(1-x)As量子阱结构。对共性能和结构参数进行了光荧光测量,荧光峰的形状和温度特性是衡量量子阱质量的重要判据。对n=1的自由激子荧光峰形状进行的讨论和模型分析推得:量子阱界面的平整度达到了单原子层起伏。荧光峰的温度特性表明样品从低温到室温都能保持激子发光特性,量子阱样品的主要性能可与国际水平相媲美。
Using the domestic MBE equipment, select the appropriate growth parameters, access to high-quality GaAs / Al_xGa (1-x) As quantum well structure. Fluorescence measurements of common properties and structural parameters were carried out. The shape and temperature characteristics of the fluorescence peaks are important criteria for measuring the quality of quantum wells. The discussion and model analysis of the free exciton fluorescence peak shape of n = 1 deduced that the flatness of the quantum well interface reached the monolayer fluctuation. The temperature characteristics of the fluorescence peak indicate that the sample can maintain the excitonic emission characteristics from low temperature to room temperature, and the main performance of the quantum well sample can be compared with the international standard.