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研究了ａ－ＳｉＮ：Ｈ的退火行为及其作为栅介质使用时，退火对ａ－Ｓｉ：ＨＴＦＴ工作特性和可靠性的影响．实验事实表明，在３８０℃以下的退火处理使ａ－ＳｉＮ：Ｈ介电常数的变化呈单调上升趋势，对ａ－Ｓｉ：ＨＴＦＴ的工作特性和可靠性有明显的改善，温度进一步升高时，介电常数减小，ａ－Ｓｉ：ＨＴＦＴ特性变坏．
The effect of annealing on the operating characteristics and reliability of a-Si: HTFT during a-SiN: H annealing and its use as a gate dielectric was investigated. Experimental results show that the annealing at 380 ℃ below the a-SiN: H dielectric constant showed a monotonous upward trend in the a-Si: HTFT operating characteristics and reliability have been significantly improved when the temperature is further increased, The dielectric constant decreases, a-Si: HTFT characteristics deteriorate.