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InGaAs/InP是制作光电器件与微波器件的重要材料。离子注入InGaAs/InP做掺杂或制作高阻层是人们十分关注的研究课题。采用Fe＋注入InGaAs/InP得到了电阻率升高的好结果。用Be＋注入制作了新结构HPT的基区。研制成功了在1.55μm波长工作的InGaAs/InP新结构光电晶体管,在0.3μW入射光条件下，光电增益为350。
InGaAs / InP is an important material for making optoelectronic devices and microwave devices. Ion implantation of InGaAs / InP to do doping or making high resistance layer is a very concerned research topic. A good result of an increase in resistivity is obtained using Fe + implantation of InGaAs / InP. The base of the new structure HPT was fabricated using Be + implantation. The new InGaAs / InP phototransistor working at a wavelength of 1.55μm has been successfully developed and has a photoelectric gain of 350 at 0.3μW incident light.