【摘 要】
:
旱作水稻的生态环境与淹水栽培时显著不同,所以不能直接应用已有的水稻栽培经验。旱种水稻的历史较短,很多技术问题,有待进一步研究。其中找出适宜的播种期,充分利用当地的
【机 构】
:
辽宁省农业科学院,辽宁省农业科学院,辽宁省农业科学院,辽宁省农业科学院,辽宁省农业科学院,辽宁省农业科学院,海城市农业技术推广中心,
论文部分内容阅读
旱作水稻的生态环境与淹水栽培时显著不同,所以不能直接应用已有的水稻栽培经验。旱种水稻的历史较短,很多技术问题,有待进一步研究。其中找出适宜的播种期,充分利用当地的光、温资源,是获得旱作水稻稳产高产的一项重要措施。为此,1981年在省农科院内试验田安排了播期试验,1982~1983年与有关单位协作探讨了最佳播期。本文主要以沈阳、海城两点1982~1983年试验资料进行初步总结。
The ecological environment of dryland rice is significantly different from that under flooded cultivation, so the existing rice cultivation experience can not be directly applied. The history of dry cultivation of rice is short, a lot of technical problems, pending further study. One of the important measures is to find suitable sowing date and make full use of local light and temperature resources to obtain stable and high-yield rice in dry land. To this end, in 1981, the experimental field in the Academy of Agricultural Sciences arranged a sowing date test, 1982 ~ 1983 and the relevant units to discuss the best sowing date. In this paper, Shenyang, Haicheng two 1982 ~ 1983 test data for the first time.
其他文献
A method of measuring laser frequency stability is proposed by using the spectral-hole-buing technique.The power spectra of the measured laser can be recorded a
一、对百泉3199小麦的综合评价百泉3199小麦,为一弱冬性的抗锈、抗倒、多穗型良种。1982—1984年曾参加两年度的省区域试验,1983—1985年又参加两年省种子公司组织的生产示
A diode-end-pumped electro-optic (EO) Q-switched adhesive-free bond composite Nd:YVO4 laser operating at a repetition rate of 200 kHz is reported.A pair of RbTi
By constructing proper basis functions,the 8 × 8 Kane Hamiltonian is transformed to two separate 4 × 4 Hamiltonians,and the Schrodinger equation for conductio
We employ the homogeneous balance method to construct the traveling waves of the nonlinear vibrational dynamics modeling of DNA.Some new explicit forms of trave
我国自1982年开始进行玉米覆膜栽培试验,1983~1984年在甘肃、内蒙古等地已进行大面积示范,取得了较好效果。 黑龙江省位于高纬度地区,无霜期短,春季常遇干旱或低温而使玉米缺
An atomic magnetometer based on optically detected magnetic resonance is investigated and demonstrated experimentally.We build an 894 nm exteal cavity diode las