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在过Hg压下对外延膜退火,然后给退火层扩散铟,可在CdTe衬底上制得高迁移率的n-型Hg_(0.8)Cd_(0.2)Te液相外延膜,其重复性好。在77K时,载流子浓度和霍尔迁移率分别为1.5～2.0×10~(15)cm_(-3)和1.0～1.5×10~5cm~2/V·s。使用这些外延膜之一制作的光导红外探测器的D_μ~*>2×l0~(10)cm·Hz~(1/2)/W(8～14μm),峰值D_(λp)~*3×10~(10)cm·Hz~(1/2)/W(13μm)。
The Hg_ (0.8) Cd_ (0.2) Te liquid-phase epitaxial film with high mobility can be fabricated on CdTe substrate by annealing the epitaxial film at Hg pressure and then diffusing indium to the annealing layer. . At 77K, the carrier concentration and Hall mobility are 1.5-2.0 × 10-15 cm -3 and 1.0-1.5 × 10-5 cm -2 / V · s, respectively. D_μ ~ *> 2 × 10 ~ (10) cm · Hz ~ (1/2) / W (8 ~ 14μm) and peak D_ (λp) ~ * 3 × of the light guide infrared detector fabricated using one of these epitaxial films 10 ~ (10) cm · Hz ~ (1/2) / W (13μm).