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本文以烧结合成的CuInS2粉末为原料,采用单源热蒸发技术在玻璃基底上沉积CuInS2薄膜。随着退火温度的升高,薄膜的结晶性能增强,表现出高度的(112)晶面择优取向,SEM观察显示:350℃退火后,薄膜致密,晶粒细小,大小为数十纳米。同时,热探针测试发现:薄膜的导电类型为弱N型。光学性能方面,当退火温度高于250℃时,CuInS2薄膜的禁带宽度为1.50 eV,接近吸收太阳光谱所需的理想禁带宽度值。
In this paper, CuInS2 powder synthesized by sintering was used as raw material to deposit CuInS2 film on glass substrate by single source thermal evaporation technology. With the increase of annealing temperature, the crystallinity of the films increases, indicating a high degree of preferred orientation of (112) crystal plane. The SEM images show that the films are dense and the grains are small with the size of tens of nanometers after annealing at 350 ℃. Meanwhile, the thermal probe test found that the conductivity type of the film is weak N type. In terms of optical properties, the CuInS2 thin film has a forbidden band width of 1.50 eV at an annealing temperature higher than 250 ° C, which is close to the ideal bandgap value required for absorbing the solar spectrum.