前言电子束作图(EB作图)与用掩模的光曝光以及X线的一次曝光作图不同,它能用CAD数据直接制作,这是EB作图的最大优点,但同时生产率却较低。现在已把它的优点灵活应用到以掩模制造为主的常规LSI直接作图上了,为了克服它的缺点,正全力研制高速作图装置和高灵敏度抗蚀剂材料。本文在以0.5μm范围内的EB直接作图及其高速化为主,介绍作图装置及其抗蚀剂工艺等现状的同时,设想本技术在今后LSI制造中 Preface E-beam mapping (EB mapping) Unlike mask exposure and X-ray exposure mapping, which can be created directly from CAD data, this is a major benefit of EB mapping but at the same time is less productive . Now that its advantages have been flexibly applied to conventional LSIs mainly for mask manufacturing, in order to overcome its shortcomings, efforts are being made to develop high-speed patterning devices and high-sensitivity resist materials. In this paper, the direct mapping of EB in the range of 0.5μm and its speed-based, introducing the current situation of the drawing device and its resist process, at the same time, this technology is envisaged in the future LSI manufacturing