用钴—60(~(60)CO)r射线对甜樱桃拿破仑的休眠接穗进行处理。描述初生枝(V_1)的性状,并报导了次生枝(V_2)的突变频率及类型,特别是照射量与V_2树(由V_1枝的有关芽信长成)的关系。诱发突变的最适照射量为4.0～4.5千伦。在所有的照射量中(3.0～5.0千伦),部分植株变异的突变体为总突变频率的6.72%,整株突变体为总突变频率的1.94％,紧凑型突变体为总突变频率的0.10%,最低芽位上(初生枝基部第3～10个芽位)以后长成的V_2树的总突变频率特别高,而在较高的芽位上(第10～37个芽位)只是整株突变体的频率比较高。本文讨论了与这个树种顶端分生组织引起的幅照损伤类型有关的遗传效果。 The dormant scion of sweet cherry Napoleon was treated with Cobalt-60 (~ (60) CO) r rays. The characteristics of primary branch (V_1) were described, and the frequency and type of secondary branch (V_2) mutation were reported, especially the relationship between the amount of irradiation and the V_2 tree (formed by the correlation of V_1 branch). The optimum dose of induced mutation is 4.0 ~ 4.5 thousand Lun. In all the irradiations (3.0-5.0 thousand lun), some plants mutated 6.72% of the total mutation frequency, the whole strain was 1.94% of the total mutation frequency, and the compact mutant frequency was 0.10 %, The frequency of total mutation of the V_2 tree grown at the lowest bud (the 3rd to 10th buds of the primary branch) was particularly high, whereas in the higher buds (the 10th to 37th buds) The frequency of strain mutants is high. This article discusses the genetic effects associated with the type of photogenic damage caused by the meristem at the top of this species.