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通过在低温和强磁场下的磁输运测量研究了非故意掺杂Al0.24Ga0.76N/GaN异质结构中二维电子气(2DEG)的磁电阻振荡现象。在强磁场下观察到了表征2DEG塞曼自旋分裂的舒勃尼科夫-德哈斯(SdH)振荡的分裂峰。通过分析SdH分裂峰的位置,获得了塞曼自旋分裂能量和g*的大小,发现由于交换相互作用,g*比g0有了显著的增加,同时g*随着磁场的增大而增大,说明随着磁场的增大,电子与电子的交换相互作用增强。
The magneto-resistance oscillations of two-dimensional electron gas (2DEG) in unintentionally doped Al0.24Ga0.76N / GaN heterostructures were investigated by magnetic transport measurements at low temperature and high magnetic field. The splitting peak of the Schoenniike-Dehs (SdH) oscillation characterizing the 2DEG Zeeman spin-splitting was observed under strong magnetic field. By analyzing the position of the SdH cleavage peak, the Zeeman spin splitting energy and the magnitude of g * are obtained. It is found that g * has a significant increase from g0 due to the exchange interaction and g * increases with increasing magnetic field , Indicating that as the magnetic field increases, the exchange interaction between electrons and electrons is enhanced.