【摘 要】
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AlGaN photoconductive ultraviolet detectors are fabricated to study their time response characteristics. Persistent photoconductivity,a deterring factor for the
【机 构】
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Tsinghua National Laboratory for Information Science and Technology,State Key Laboratory on Integrat
论文部分内容阅读
AlGaN photoconductive ultraviolet detectors are fabricated to study their time response characteristics. Persistent photoconductivity,a deterring factor for the detector response time,is found to be strongly related to the grain boundary density in AlGaN epilayers.By improving the crystal-nuclei coalescence process in metal organic vapor phase epitaxy,the grain-boundary density can be reduced,resulting in an-order-of-magnitude decrease in response time.
AlGaN photoconductive ultraviolet detectors are fabricated to study their time response characteristics. Persistent photoconductivity, a deterring factor for the detector response time, is found to be strongly related to the grain boundary density in AlGaN epilayers. Py positive the crystal-nuclei coalescence process in metal organic vapor phase epitaxy, the grain-boundary density can be reduced, resulting in an-order-of-magnitude decrease in response time.
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