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通过分析微波单片集成电路（MMIC）与常用的微波立体电路的不同点，讨论了采用通用的微波电路软件进行MMIC精确设计的有效途径．着重分析了在软件中如何建立三类MMIC用元件（有源器件、无源元件及由MMIC工艺决定的特有图形元件）电路模型的方法借助这一分析，使用通用的微波电路软件，完成了Ku波段两级AlGaAs／InGaAsPHEMT单片低噪声放大器的设计与研制，取得了与CAD设计值十分相近的实验结果：在13．4～14．0GHz的频率范围内，噪声系数（NF）1．66±0．04dB，相关增益（Ga）13．3±0．05dB，为国内目前的最好结果
By analyzing the difference between microwave monolithic integrated circuits (MMICs) and commonly used microwave stereo circuits, an effective way to accurately design MMICs using common microwave circuit software is discussed. Focusing on the analysis of how to set up the circuit model of three types of MMIC components (active devices, passive components and the special graphics components determined by MMIC process) in the software, we use this analysis to make use of common microwave circuit software to complete the Ku Band AlGaAs / InGaAsPHEMT single-chip low-noise amplifier design and development, obtained with the CAD design values are very similar experimental results: In the frequency range of 13.4 ~ 14.0GHz, the noise figure (NF) of 1.66 ± 0.04dB, the relevant gain (Ga) 13.3 ± 0.05dB, is the best result in the country at present